Semiconductor
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Next - generation electrode

The necessity for the development of novel metal electrode materials is increasing in response to semiconductor integration and miniaturization
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Our group is conducting research on next-generation semiconductor electrode materials by using various synthesis methods and exploring semiconductor electrode materials.

Synthesis of metal nanoparticles

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Atomic Layer Deposition (ALD) Process
Our group utilizes IPS-DC Bias ALD and ICP-Remote Plasma ALD to 
precisely deposit high-quality thin films for next-generation semiconductor devices, 
while tailoring electrode and interface properties.
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IPS-DC Bias ALD

Controls ion energy with a DC bias for dense, uniform, and high-quality thin films.
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ICP-Remote Plasma

Uses remote plasma radicals for low-damage, conformal deposition on complex structures.